mimix broadband's 18.0-21.0/36.0-42.0 ghz gaas mmic doubler integrates a doubler and 4-stage power amplifier. the device provides better than +26.0 dbm output power and has excellent fundamental rejection. this mmic uses mimix broadband?s gaas phemt device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. the chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. this device is well suited for millimeter-wave point-to-point radio, lmds, satcom and vsat applications. 18.0-21.0/36.0-42.0 ghz gaas mmic doubler and power amplifier integrated doubler and power amplifier excellent saturated output stage +26.0 dbm output power 50.0 dbc fundamental suppression 100% on-wafer rf, dc and output power testing 100% commercial-level visual inspection using mil-std-883 method 2010 features general description electrical characteristics (ambient temperature t = 25 o c) parameter input frequency range (fin) output frequency range (fout) input return loss (s11) output return loss (s22) fundamental rejection rf input power (rf pin) output power at 0.0 dbm pin (pout) drain supply voltage (vd1) doubler drain supply voltage (vd2) buffer amp drain supply voltage (vd3,4,5,6) pa gate supply voltage (vg1) doubler drain supply current (id1) doubler drain supply current (id2) buffer drain supply current (id3,4,5,6) (vg=-0.7v typical) pa units ghz ghz db db dbc dbm dbm v v v v ma ma ma min. 18.0 36.0 - - - - - - - - - - - - typ. - - tbd 12.0 50.0 0.0 +26.0 2.5 3.0 4.5 -1.2 <1.0 20 530 max. 21.0 42.0 - - - - - 3.0 4.0 5.5 - - 25 600 absolute maximum ratings supply voltage (vd) supply current (id) gate bias voltage (vg) input power (rf pin) storage temperature (tstg) operating temperature (ta) channel temperature (tch) +6.0 vdc 800 ma +0.3 vdc tbd -65 to +165 o c -55 to mttf table mttf table chip device layout page 1 of 6 1 (1) channel temperature affects a device's mttf. it is recommended to keep channel temperature as low as possible for maximum life. 1 mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2008 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. november 2008 - rev 03-nov-08 x1001-bd
power amplifier measurements page 2 of 6 18.0-21.0/36.0-42.0 ghz gaas mmic doubler and power amplifier vdx2=2.5 v , vd b=3 v, vd pa =4.5 v, p in= +2..+9 d b m -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 30 37 37.5 38 38.5 39 39.5 40 output frequency ( ghz) output pow er ( dbm ) p out @ 2 f in p out @ f in v dx2 =2.5 v, v dbuff =3 v i db =30 ma, v dpa =4.5 v i dpa =520 ma -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 30 35 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 10 input power (dbm) at f in output power at f in and 2xf in (dbm) 37.0 37.5 38.0 38.5 39.0 39.5 40.0 10 15 20 25 30 35 p in =+10 db m p in =0 dbm doubler drain current (ma) output frequency (g hz) v dx2 =2.5v, v db =3 v , v dpa =4.5 v @ p in =0..+10 db m 024 6810 15 20 25 30 35 37-40 ghz doubler drain current (ma) input power @ f in (g hz) v dx2 =2.5v, v db =3 v , v dpa =4.5 v @ p in =0..+10 db m v dx2 =2.5 v, v dbuff =3 v i db =30 m a, v dpa =4.5 v i dpa =520 m a 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 -10-9-8-7-6-5-4-3-2-1012345678 910 input power ( dbm) a t f in output powe r a t 2x f in (d b m) v dx2 =2.5 v , v dbuff =3 v i db =30 ma , v dpa =4.5 v i dpa =520 ma -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 -10-9-8-7-6-5-4-3-2-1 0 1 2 3 4 5 6 7 8 910 input power (db m) at f in output powe r a t f in (d b m) 062 9, rc =r 10c 12, r f freq (g hz)=37 062 9, rc =r 10c 12, r f freq (g hz)=38 062 9, rc =r 10c 12, r f freq (g hz)=39 062 9, rc =r 10c 12, r f freq (g hz)=40 x1001-bd mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2008 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. november 2008 - rev 03-nov-08
18.0-21.0/36.0-42.0 ghz gaas mmic doubler and power amplifier page 3 of 6 mechanical drawing bias arrangement bypass capacitors - see app note [2] (note: engineering designator is 20dbl0629) units: millimeters (inches) bond pad dimensions are shown to center of bond pad. thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), backside is ground, bond pad/backside metallization: gold all dc bond pads are 0.100 x 0.100 (0.004 x 0.004). all rf bond pads are 0.100 x 0.200 (0.004 x 0.008) bond pad centers are approximately 0.109 (0.004) from the edge of the chip. dicing tolerance: +/- 0.005 (+/- 0.0002). approximate weight: 3.987 mg. bond pad #1 (rf in) bond pad #2 (vg2) bond pad #3 (vd2) bond pad #4 (vd3) bond pad #5 (vd4) bond pad #6 (vd5) bond pad #7 (vd6) bond pad #8 (rf out) bond pad #9 (vg6) bond pad #10 (vg5) bond pad #11 vg4) bond pad #12 (vg3) bond pad #13 (vd1) bond pad #14 (vg1) x1001-bd 1.700 (0.067) 1 2 3 4 5 6 7 8 9 10 11 12 13 0.295 (0.012) 0.694 (0.027) 1.095 (0.043) 1.494 (0.059) 2.503 (0.099) 2.096 (0.083) 1.495 (0.059) 1.095 (0.043) 0.695 (0.027) 0.295 (0.012) 0.0 0.0 0.605 (0.024) 14 2.096 (0.083) 2.705 (0.107) 0.638 (0.025) 3.000 (0.118) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 rf in vg1 rf out vd1 vg3,4,5 vg6 vg2 vd2 vd3,4,5 vd6 mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2008 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. november 2008 - rev 03-nov-08
18.0-21.0/36.0-42.0 ghz gaas mmic doubler and power amplifier mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2008 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. page 4 of 6 app note [1] biasing - it is recommended to separately bias each amplifier stage vd1 through vd6 at vd1=2.5v, vd2=3.0v, vd(3,4,5,6)=4.5v with id1<1ma, id2=20ma, id3=40ma, id4=70ma, id5=150ma, id6=270ma. separate biasing is recommended if the amplifier is to be used at high levels of saturation, where gate rectification will alter the effective gate control voltage. as shown in the bonding diagram, it is possible to parallel stages vd(3,4,5) with id(3,4,5)=260ma while maintaining satisfactory performance. for non-critical applications it is possible to para llel stages vd(3,4,5,6) together and adjust the common gate voltage vg(3,4,5,6) for total drain current id(total)=530ma. it is also recommended to use active biasing to keep the currents constant as the rf power and temperature vary; this gives the most reproducible results. depending on the su pply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifi er, with a low value resistor in series with the drain supply used to sense the current. the gate of the phemt is controlled to maintain correct dra in current and thus drain voltage. the typical gate voltage needed to do this is -0.7v. typically the gate is protected with silicon diodes to lim it the applied voltage. also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply. app note [2] bias arrangement - for parallel stage bias (recommended for general applications) -- the same as individual stage bias but all the drain pad dc by pass capacitors (~100-200 pf) can be combined. additional dc bypass capacitance (~0.01 uf) is also recommended to all dc or combination (if gat e or drains are tied together) of dc bias pads. vd(3,4,5,6) or vg(3,4,5,6) have been tied together but can be left open. for individual stage bias (recommended for saturated applications) -- each dc pad (vd1,2,3,4,5,6 and vg1,2,3,4,5,6) needs to ha ve dc bypass capacitance (~100-200 pf) as close to the device as possible. additional dc bypass capacitance (~0.01 uf) is also recommended. mttf mttf is calculated from accelerated life-time data of single devices and assumes an isothermal back-plate. x1001-bd xx1001-bd, mttf (yrs) vs. backplate temperature (c) 1.0e+00 1.0e+01 1.0e+02 1.0e+03 1.0e+04 1.0e+05 55 65 75 85 95 temperature (c) mttf (years) november 2008 - rev 03-nov-08
18.0-21.0/36.0-42.0 ghz gaas mmic doubler and power amplifier page 5 of 6 device schematic amp vd vg amp vd vg amp vd vg amp vd vg amp vd vg x2 vd vg rfo ut rfin vd3vd4vd5vd6 vd2 vg3 v g4 vg5 v g6 vg2 vg1 v d1 x1001-bd mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2008 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. november 2008 - rev 03-nov-08
18.0-21.0/36.0-42.0 ghz gaas mmic doubler and power amplifier page 6 of 6 handling and assembly information ordering information caution! - mimix broadband mmic products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: ? do not ingest. ? do not alter the form of this product into a gas, po wder, or liquid through burning, crushing, or chemical processing as thes e by- products are dangerous to the human body if inhaled, ingested, or swallowed. ? observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. life support policy - mimix broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the president and general counsel of mimix broadband. as used herein: (1) life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to aff ect its safety or effectiveness. esd - gallium arsenide (gaas) devices are susceptible to electrostatic and mechanical damage. die are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti-static workstation. devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. die attachment - gaas products from mimix broadband are 0.100 mm (0.004") thick and have vias through to the backside to enable grounding to the circuit. microstrip substrates should be brought as close to the die as possible. the mounting surface should be clean and flat. if using conductive epoxy, recommended epoxies are tanaka ts3332ld, die mat dm6030hk or dm6030hk-pt cured in a nitrogen atmosphere per manufacturer's cure schedule. apply epoxy sparingly to avoid getting any on to the top surface of the die. an epoxy fillet should be visible around the total die periphery. for additional information please see the mimix "epoxy specifications for bare die" application note. if eutectic mounting is preferred, then a fluxless gold-tin (ausn) preform, appr oximately 0.001 2 thick, placed between the die and the attachment surface should be used. a die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. the gold-t in eutectic (80% au 20% sn) has a melting point of approximately 280o c (note: gold germanium should be avoided). the work station temperature should be 310o c +/- 10o c. exposure to these extreme temperatures should be kept to minimum. the collet should be heated, and the die pre-heated to avoid excessive thermal shock. avoidance of air bridges and force impact are critical during placement. wire bonding - windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. the recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize rf port bond inductance. gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for dc bias connections. aluminum wire should be avoided. thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. bond force, time and ultrasonics are all critical parameters . bonds should be made from the bond pads on the die to the package or substrate. all bonds should be as short as possible. x1001-bd part number for ordering description xx1001-bd-000v ?v? - vacuum release gel paks xx1001-bd-ev1 xx1001 die evaluation module mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2008 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. caution: esd sensitive appropriate precautions in handling, packaging and testing devices must be observed. proper esd procedures should be followed when handling this device. november 2008 - rev 03-nov-08
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